硅(gui)-藍(lan)(lan)(lan)輝石(shi)(shi)由(you)單晶體隔熱(re)(re)性(xing)(xing)(xing)體屬性(xing)(xing)(xing)組成，不(bu)發(fa)生(sheng)了(le)(le)(le)了(le)(le)(le)落伍、身(shen)體疲勞(lao)和(he)(he)熱(re)(re)變(bian)(bian)形(xing)后(hou)(hou)果；藍(lan)(lan)(lan)輝石(shi)(shi)體現了(le)(le)(le)愈(yu)來愈(yu)好的(de)(de)(de)塑性(xing)(xing)(xing)和(he)(he)隔熱(re)(re)性(xing)(xing)(xing)性(xing)(xing)(xing)狀（1000℃已內），對溫度因素發(fa)生(sheng)了(le)(le)(le)改變(bian)(bian)不(bu)的(de)(de)(de)過(guo)敏(min)，盡管在(zai)高溫作業(ye)前(qian)提下(xia)，也體現了(le)(le)(le)挺好的(de)(de)(de)做工作性(xing)(xing)(xing)狀；藍(lan)(lan)(lan)輝石(shi)(shi)的(de)(de)(de)抗大范圍(wei)地擴散性(xing)(xing)(xing)狀極具；還，硅(gui)-藍(lan)(lan)(lan)輝石(shi)(shi)半(ban)導體技術(shu)的(de)(de)(de)過(guo)敏(min)開關(guan)元(yuan)器(qi)件封(feng)裝，無p-n漂(piao)移，如此，可應運于多種復雜化學習(xi)環境場景。傳紅外(wai)感應器(qi)器(qi)由(you)雙膜(mo)片(pian)(pian)(pian)帶來：鈦(tai)(tai)和(he)(he)金(jin)檢測膜(mo)片(pian)(pian)(pian)和(he)(he)鈦(tai)(tai)和(he)(he)金(jin)發(fa)收(shou)(shou)(shou)膜(mo)片(pian)(pian)(pian)。刷有(you)異質本質性(xing)(xing)(xing)應變(bian)(bian)力(li)靈活(huo)電(dian)(dian)橋集成運放(fang)的(de)(de)(de)藍(lan)(lan)(lan)輝石(shi)(shi)膜(mo)片(pian)(pian)(pian)，被(bei)(bei)熔焊在(zai)鈦(tai)(tai)和(he)(he)金(jin)檢測膜(mo)片(pian)(pian)(pian)上(shang)。被(bei)(bei)測的(de)(de)(de)學習(xi)壓力(li)差(cha)輸(shu)送(song)到(dao)發(fa)收(shou)(shou)(shou)膜(mo)片(pian)(pian)(pian)上(shang)。在(zai)的(de)(de)(de)學習(xi)壓力(li)差(cha)的(de)(de)(de)做用下(xia)，鈦(tai)(tai)和(he)(he)金(jin)發(fa)收(shou)(shou)(shou)膜(mo)片(pian)(pian)(pian)發(fa)生(sheng)了(le)(le)(le)塑性(xing)(xing)(xing)變(bian)(bian)形(xing)，該塑性(xing)(xing)(xing)變(bian)(bian)形(xing)被(bei)(bei)硅(gui)-藍(lan)(lan)(lan)輝石(shi)(shi)的(de)(de)(de)過(guo)敏(min)開關(guan)元(yuan)器(qi)件封(feng)裝感覺后(hou)(hou)，其電(dian)(dian)橋輸(shu)出會發(fa)生(sheng)了(le)(le)(le)了(le)(le)(le)發(fa)生(sheng)了(le)(le)(le)改變(bian)(bian)，發(fa)生(sheng)了(le)(le)(le)改變(bian)(bian)的(de)(de)(de)浮度與(yu)被(bei)(bei)測的(de)(de)(de)學習(xi)壓力(li)差(cha)正比(bi)。電(dian)(dian)橋集成運放(fang)將電(dian)(dian)橋的(de)(de)(de)貧富分(fen)化衛(wei)星移動(dong)信號，改換為(wei)電(dian)(dian)阻衛(wei)星移動(dong)信號輸(shu)出。